S T G 2507
S amHop Microelectronics C orp.
May,10 2005
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
-20V
F E AT UR E S
( m
W
) Max
I
D
6.2A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
17 @ V
G S
= -4.5V
25 @ V
G S
= -2.5V
R ugged and reliable.
S urface Mount P ackage.
D
2
8
S
2
7
S
2
6
G
2
5
T S S OP
1
(T OP V IE W)
1
2
3
4
D
1
S
1
S
1
G
1
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
J
=25 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
-20
12
-6.2
-25
-1.7
1.5
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
85
C /W
1
S T G 2507
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
S ymbol
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= -16V, V
GS =
0V
V
GS
= 12V,V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS =
-4.5V,I
D
= - 6 A
V
GS
=-2.5V,I
D
=- 4 A
V
DS
=-5V,V
GS
=
-
4.5V
V
DS
= -5V, I
D
= -6 A
Min Typ
C
Max Unit
-20
-1
V
uA
100 nA
-0.5
-0.8 -1.5
15 17
20 25
22
1782
488
77
V
m ohm
m ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
-20
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=-10V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= -10V,
I
D
= 1A,
V
GE N
= -4.5V,
R
L
= 10
ohm
R
GE N
= 6
ohm
V
DS
=-10V, I
D
= 6A,
V
GS
=-4.5V
6.1
14.8
59
29.7
30.3
4.5
6.5
ns
ns
ns
ns
nC
nC
nC
2
S T G 2507
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
-0.76 -1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V
G S
=-2V
16
12
V
G S
=-4.5,-4,-3.5,V
15
-55 C
T j=125 C
9
25 C
I
D
, Drain C urrent(A)
12
I
D
, Drain C urrent (A)
8
V
G S
=-1.5V
4
V
G S
=-1V
0
0
2
4
6
8
10
12
6
3
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
2.2
2000
1600
1200
800
C os s
400
C rs s
0
0
4
8
12
16
20
24
0
C is s
1.8
F igure 2. Trans fer C haracteris tics
V
G S
=-4.5V
I
D
=6A
R
DS(ON)
, On-Resistance
(Normalized)
C , C apacitance (pF )
1.4
1.0
0.6
0.2
-50
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
S T G 2507
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125
V
DS
=V
G S
I
D
=250uA
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
36
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
g
F S
, T rans conductance (S )
24
18
12
6
0
0
3
6
9
V
DS
=5V
12
15
Is , S ource-drain current (A)
30
1
0
0.4
0.6
0.8
1.0
T
J
=25 C
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
5
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
it
10
0m
s
V
G S
, G ate to S ource V oltage (V )
4
3
2
1
0
0
V
DS
=-10V
I
D
=6A
10
R
DS
)
(O N
L im
10
ms
11
1s
DC
0.1
0.03
V
G S
=4.5V
S ingle P ulse
T c=25 C
0.1
1
10
20
50
4
8
12
16
20
24
28 32
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe
O perating Area
4
S T G 2507
DD
-V
t
on
t
off
t
r
90%
5
V
G S
R
GE N
V
IN
D
G
R
L
V
OUT
t
d(on)
V
OUT
t
d(off)
90%
10%
t
f
10%
INVE R TE D
90%
S
V
IN
50%
10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
F igure 12. S witching Waveforms
2
r(t),Normalized E ffective
T ransient T hermal Impedance
1
Duty C ycle=0.5
0.2
0.1
0.1
0.05
0.02
S ingle P uls e
0.01
10
-4
P
DM
t
1
1.
2.
3.
4.
10
-2
t
2
R
thJ A
(t)=r (t) * R
thJ A
R
thJ A
=S ee Datas heet
T
J M-
T
A
= P
DM
* R
thJ A
(t)
Duty C ycle, D=t
1
/t
2
10
100
10
-3
10
-1
1
S quare Wave P uls e Duration (s ec)
F igure 13. Normalized T hermal T rans ient Impedance C urve
5
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